收藏本站
Si4946BEY
Vishay Siliconix
Dual N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
60
R DS(on) ( Ω )
0.041 at V GS = 10 V
0.052 at V GS = 4.5 V
I D (A)
6.5
5.8
Q g (Typ.)
9.2 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 175 °C Maximum Junction Temperature
? 100 % R g Tested
? Compliant to RoHS directive 2002/95/EC
SO-8
S 1
G 1
S 2
G 2
1
2
3
4
8
7
6
5
D 1
D 1
D 2
D 2
G 1
D 1
G 2
D 2
Top View
Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free)
S 1
S 2
Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
60
± 20
6.5
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
5.5
5.3 a, b
Pulsed Drain Current
Continuous Source Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0 1 mH
I DM
I S
I AS
E AS
4.4 a, b
30
3.1
2 a, b
12
7.2
A
mJ
T C = 25 °C
3.7
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.6
2.4 a, b
W
T A = 70 °C
1.7 a, b
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a, c
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
50
33
62.5
41
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4966DY-T1-GE3 MOSFET 2N-CH 20V 8SOIC
SI4972DY-T1-GE3 MOSFET N-CH DUAL 30V 8-SOIC
SI4973DY-T1-GE3 MOSFET 2P-CH 30V 5.8A 8SOIC
SI5040-D-GM IC TXRX XFP 10GBPS 32LGA
SI5402DC-T1-GE3 MOSFET N-CH D-S 30V 1206-8
SI5403DC-T1-GE3 MOSFET P-CH 30V 6A 1206-8
SI5432DC-T1-GE3 MOSFET N-CH 20V 6A 1206-8
SI5440DC-T1-GE3 MOSFET N-CH D-S 30V 1206-8
相关代理商/技术参数
SI4946EY 功能描述:MOSFET 60V 4.5A 2.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4946EY 制造商:Vishay Siliconix 功能描述:MOSFET DUAL NN SO-8
SI4946EY-E3 功能描述:MOSFET 60V 4.5A 2.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4946EY-T1 功能描述:MOSFET 60V 4.5A 2.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4946EY-T1-E3 功能描述:MOSFET 60V 4.5A 2.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4947ADY 功能描述:MOSFET 30V 3.9A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4947ADY_06 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET
SI4947ADY-E3 功能描述:MOSFET 30V 3.9A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube